cla 50 e 1200 hb v = v ka2s ka2s ka2s ka2s high efficiency thyristor symbol definition r a t i n g s features / advantages: typ. max. i r/d v i a v t 1.32 r 0.25 k/w r/d 2 1 3 min. 50 applications: v rsm/dsm v 1300 50 t = 25c vj t = c vj ma 4 package: part number v = v r/d t = 25c vj i = a t v t = c c 125 p tot 500 w t = 25c c t vj 150 c -40 v i rrm = = 1200 79 50 cla 50 e 1200 hb v a 1200 max. non-repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop virtual junction temperature total power dissipation conditions unit 1.60 t = 25c vj 125 v t0 v 0.88 t = c vj 150 r t 7.7 m ? v 1.27 t = c vj i = a t v 50 1.65 i = a t 100 i = a t 100 threshold voltage slope resistance for power loss calculation only backside: anode =50 a housing: single thyristor to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant a thyristor for line frequency planar passivated chip long-term stability softstart ac motor control dc motor control power converter ac power control lighting and temperature control 125 v rrm/drm v 1200 max. repetitive reverse/forward blocking voltage t = 25c vj i a 79 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0.5 average gate power dissipation c j 25 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = c vj 45 max. forward surge current t = c vj 150 i2t t = c 45 value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 i 550 595 1.11 1.06 a a a a 470 505 1.52 1.48 1200 300 s rms forward current t ( rms ) t(rms) t(av)m 180 sine t ( av ) m average forward current ixys reserves the right to change limits, conditions and dimensions. 20101215e data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
cla 50 e 1200 hb (di/dt) cr a/ s 150 repetitive, i = t vj = 150 c critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t = 150 c critical rate of rise of voltage a/ s 500 v/ s f = 50 hz; t = 200 s ia; v = ? v r = ; method 1 (linear voltage rise) vj d vj symbol definition ratings typ. max. min. conditions uni t 40 a t p g = 0.3 di /dt a/s g =0.3 d drm cr v = ? v d drm gk 1000 1.5 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 50 m a t= c -40 vj 1.6 v 80 m a v gd gate non-trigger voltage t= c vj 0.2 v i gd gate non-trigger current 3m a v = ? v d drm 150 latching current t= c vj 125 m a i l 25 ts p =10 ia; g = 0.3 di /dt a/s g =0.3 holding current t= c vj 100 m a i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2s t gd 25 ia; g = 0.3 di /dt a/s g =0.3 v = ? v d drm turn-off time t= c vj 200 s t q di/dt = a/s; 10 dv/dt = v/s 20 v = r 100 v; i a t =33 v = ? v d drm t s p = 200 non-repetitive, i = 50 a t ; 150 ixys reserves the right to change limits, conditions and dimensions. 20101215e data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
cla 50 e 1200 hb i rms a per terminal 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name cla 50 e 1200 hb 503748 tube 30 000000 yywwz logo marking on product datecode assembly code abcdef product marking assembly line c l a 50 e 1200 hb thyristor (scr) high efficiency thyristor (up to 1200 v) single part to-247ad (3) = = = cla50e1200tc to-268aa (d3pak) similar part package marking on product CLA50E1200HB 1200 voltage class current rating [a] reverse voltage [v] = = = = part number ixys reserves the right to change limits, conditions and dimensions. 20101215e data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
cla 50 e 1200 hb s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. 20101215e data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
cla 50 e 1200 hb 10 100 1000 1 10 100 1000 0.01 0.1 1 0 100 200 300 400 500 600 700 800 900 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 i tsm [a] i t [a] v t [v] t [s] z thjc [k/w] 23456789 0 1 1 100 1000 10000 i 2 t [a 2 s] t [ms] i t(av)m [a] t c [c] 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 fig. 1 forward characteristics t vj = 125c fig. 3 i 2 t versus time (1-10 ms) t [s] fig. 6 max. forward current at case temperature fig. 2 surge overload current fig. 7 transient thermal impedance junction to case 1 10 100 1000 10000 0.1 1 10 i g [ma] v g [v] 1: i gt ,t vj =125c 2: i gt ,t vj =25c 3: i gt ,t vj =-40c 4: p gav =0.5w 5: p gm =1w 6: p gm =10w i gd ,t vj = 150c t gd [s] i g [ma] typ. limit t vj =125c t vj =25c 6 5 4 1 2 3 fig. 4 gate trigger characteristics fig. 5 gate controlled delay time t gd ri t i 0.0075 0.0011 0.017 0.0019 0.057 0.0115 0.158 0.12 0.0105 0.5 t vj = 125c t vj =45c 50 hz, 80% v rrm t vj =125c t vj = 45c v r =0 v ixys reserves the right to change limits, conditions and dimensions. 20101215e data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
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